Photoelectric response of ITO films under UV irradiation
DOI:
https://doi.org/10.54708/26587572_2026_812453Keywords:
Indium tin-doped oxide, ITO, electrical properties of ITO, photoelectric response of ITO, UV exposureAbstract
This article presents the results of a study of photoinduced processes occurring in ITO thin films exposed to UV radiation. For the study, ITO films were deposited on glass substrates under different process conditions, which allowed them to achieve distinctly different initial concentrations of oxygen vacancies and conduction electrons, respectively. Monitoring the resistance of the prepared ITO samples exposed to UV radiation revealed a decrease caused by the generation of charge carriers due to the breakdown of chemical bonds with gas atoms adsorbed on the film surface. Polycrystalline ITO films with a low oxygen vacancy content exhibit the greatest sensitivity to UV irradiation. Furthermore, it was shown that the generation of additional charge carriers in ITO is also due to the thermal ionization of tin impurity atoms. Furthermore, an increase in the potential difference across the metal contact pads was detected during UV exposure of Al/ITO/Al thin-film structures. The conducted studies of the photoelectric response of ITO films when exposed to UV radiation show the possibility of using ITO films as a sensitive layer of a UV radiation detector.References
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