Study of a semiconductor IR photodiode in the near-infrared range
DOI:
https://doi.org/10.54708/26587572_2026_832645Keywords:
Photodiode, IR range, gallium arsenide, current-voltage characteristics, charge-current characteristics, p-n junction doping concentrationAbstract
Photodiodes are among the most widely used semiconductor devices, finding extensive application across various fields of science and engineering. Their popularity is driven by high sensitivity to electromagnetic radiation in the visible, ultraviolet, and infrared spectral ranges, enabling their use for a broad spectrum of tasks — from light signal detection to complex optical measurements and information transmission systems. A particularly relevant and promising area of photodiode application is modern optoelectronics, where they serve as key components in optical communication devices, sensors, surveillance systems, medical equipment, and numerous other innovative technologies. The present paper focuses on the investigation of the characteristics of a semiconductor infrared (IR) photodiode developed and manufactured at the enterprise JSC "NIIPP". The physical operating principles of the device, its structural features, and production technologies are examined in detail. A comprehensive analysis of the key performance parameters determining the photodiode's efficiency in the infrared range is conducted, including spectral responsivity, dark current, response speed, and noise characteristics. Special attention is given to the optimization of these parameters to enhance device reliability and expand its application areas.References
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